22.Radiation-Tolerant1Gbit-64M×16bitParallelNORFLASHEAFP64M16-PGAD_副本

Product Applications

This product is primarily used in high-speed, high-reliability non-volatile data read/write and storage applications.

Main Features

  • Capacity: 1 Gbit, 64M × 16 bit
  • Part Number: ZDFP64M16-PGAD
  • Interface Type: Parallel
  • Maximum Access Time: 90 ns
  • Maximum Erase/Write Cycles: 100k
  • Operating Voltage: 2.7V ~ 3.6V
  • Operating Temperature: -55℃ ~ 125℃
  • Storage Temperature: -65℃ ~ 150℃
  • Package Type: BGA 64
  • ESD Rating: 2000V (HBM)

 

Radiation Hardness Specifications

  • Total Ionizing Dose (TID): ≥100 krad(Si)
  • Single Event Latch-up (SEL) Threshold: ≥75 MeV·cm²/mg
  • Upset Rate: ≤2E-10 errors/bit·day

 

Feature Description

  • Supports CFI (Common Flash Interface)
  • Supports single-word programming, write-buffer programming, sector erase, and chip erase
  • Supports Toggle bit
  • Supports Data Polling
  • Supports write protection via #RES pin

 

Radiation-Tolerant 1 Gbit (64M×16 bit) Parallel NOR FLASH

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