20.Radiation-Tolerant256Mbit-16M×16bitParallelNORFLASHEAFP16M16-PSODHEAFP16M16-PSODHW_副本

Product Applications

This product is primarily used in high-speed, high-reliability non-volatile data read/write and storage applications.

Main Features

  • Capacity: 256 Mbit, 16M × 16 bit
  • Part Number: ZDFP16M16-PSODH / ZDFP16M16-PSODHW
  • Interface Type: Parallel
  • Maximum Access Time: 90 ns
  • Maximum Erase/Write Cycles: 100k
  • Operating Voltage: 2.7V ~ 3.63V
  • Operating Temperature: -55℃ ~ 125℃
  • Storage Temperature: -65℃ ~ 150℃
  • Package Type: TSOP 56
  • ESD Rating: 2000V (HBM)
  • Utilizes lead-tin plating process

 

Radiation Hardness Specifications

  • Total Ionizing Dose (TID): ≥100 krad(Si)
  • Single Event Latch-up (SEL) Threshold: ≥75 MeV·cm²/mg
  • Upset Rate: ≤2E-10 errors/bit·day

 

Feature Description

  • Supports CFI (Common Flash Interface)
  • Supports single-word programming, write-buffer programming, sector erase, and chip erase
  • Supports Toggle bit
  • Supports Data Polling
  • Supports write protection via #RES pin

Radiation-Tolerant 256 Mbit (16M×16 bit) Parallel NOR FLASH

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