18.Radiation-Hardened256Mbit-16M×16bitParallelNORFLASHEAFP16M16RH-CFPE_副本

Product Applications

This product is primarily used in various high-speed memory systems in high-radiation environments.

Main Features

  • Capacity: 256 Mbit, 16M × 16 bit
  • Part Number: ZDFP16M16RH-CFPE
  • Interface Type: Parallel
  • Maximum Access Time: 200 ns
  • Maximum Erase/Write Cycles: 100k
  • Operating Voltage: 2.7V ~ 3.6V
  • Operating Temperature: -55℃ ~ 125℃
  • Storage Temperature: -65℃ ~ 150℃
  • Package Type: CFP 56
  • ESD Rating: 2000V (HBM)

 

Radiation Hardness Specifications

  • Total Ionizing Dose (TID): ≥100 krad(Si)
  • Single Event Latch-up (SEL) Threshold: ≥84 MeV·cm²/mg
  • Soft Error Rate (SER): ≤7.5E-16 errors/bit·day

 

Feature Description

  • Supports CFI (Common Flash Interface)
  • Supports single-word programming, write-buffer programming, sector erase, and chip erase
  • Supports Toggle bit and Data Polling
  • Supports write protection via #RES pin

 

Radiation-Hardened 256 Mbit (16M×16 bit) Parallel NOR FLASH

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