14.High-Reliability1Mbit-128K×8bitParallelNon-VolatileNVSRAMEANP128K8-PSOD_副本

Product Applications

This product is primarily used in high-speed, high-reliability non-volatile data read/write and storage applications.

Main Features

  • Capacity: 1 Mbit, 128K × 8 bit
  • Part Number: ZDNP128K8-PSOD
  • Maximum Access Time: 25 ns
  • Interface Type: Parallel
  • Operating Voltage: 3.0V ~ 3.6V
  • Operating Temperature: -55℃ ~ 125℃
  • Storage Temperature: -65℃ ~ 150℃
  • Package Type: SOP 32
  • ESD Rating: 2000V (HBM)

 

Feature Description

  • Stores SRAM data to non-volatile cells via software or on power-down (store-to-NVM)
  • Recalls data from non-volatile cells to SRAM via software or on power-up (recall-to-SRAM)
  • High-reliability NVSRAM with unlimited read, write, and recall cycles
  • Non-volatile cell STORE cycles: 100,000
  • Data retention: 20 years at 25℃

High-Reliability 1Mbit (128K×8bit) Parallel Non-Volatile NVSRAM

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