12.High-Speed144Mbit-4M×36bitSynchronousPipelinedBurstDDRSRAMEASD4M36-PGAD_副本

Product Applications

This product is primarily used in high-reliability and high-speed signal read/write control applications.

Main Features

  • Capacity: 144 Mbit, 4M × 36 bit
  • Part Number: ZDSD4M36-PGAD
  • Maximum Operating Frequency: 333 MHz
  • Operating Voltage: 1.8V (Core), 1.5V/1.8V (IO)
  • Operating Mode: Synchronous
  • Operating Temperature: -55℃ ~ 125℃
  • Storage Temperature: -65℃ ~ 150℃
  • Package Type: FBGA 165
  • ESD Rating: 2000V (HBM)

 

Feature Description

  • Double Data Rate (DDR) interface at 333 MHz frequency (data transfer rate of 666 MHz)
  • Synchronous internal self-timed write
  • When #DOFF is high, DDR II access latency is 1.5 cycles; when #DOFF is low, it operates in a DDR I-like mode with a 1-cycle access latency
  • 1.8V core voltage, supports HSTL high-speed transceiver protocol
  • Extended HSTL output voltage (supports 1.5V and 1.8V IO voltage)
  • JTAG 1149.1 compatible test access port
  • Built-in Delay-Locked Loop (DLL)

High-Speed 144 Mbit (4M×36 bit) Synchronous Pipelined Burst DDR SRAM

Home    Memory Components    High-Speed 144 Mbit (4M×36 bit) Synchronous Pipelined Burst DDR SRAM