11.Low-Power64Mbit-4M×16bitAsynchronousSRAMEASP4M16-PSO_副本

Product Applications

This product is primarily used in high-reliability and low-power data storage applications.

Main Features

  • Capacity: 64 Mbit, 4M × 16 bit
  • Part Number: ZDSP4M16-PSO
  • Maximum Access Time: 55 ns
  • Operating Voltage: 2.2V ~ 3.6V
  • Operating Mode: Asynchronous
  • Operating Temperature: -55℃ ~ 125℃
  • Storage Temperature: -65℃ ~ 150℃
  • Package Type: FBGA 48
  • ESD Rating: 2000V (HBM)

 

Feature Description

  • High-performance, low-power CMOS process
  • Maximum standby current < 150 mA
  • Expansion support: #CE1, CE2, and #OE
  • High-byte control signal (#BHE) and low-byte control signal (#BLE) enable data read/write control for high and low 8-bit bytes

 

Low-Power 64 Mbit (4M×16 bit) Asynchronous SRAM

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