10.High-Speed16Mbit-1M×16bitAsynchronousSRAMEASP1M16-PSOEASP1M16-PSODW_副本

Product Applications

This product is primarily used in high-reliability and high-speed signal read/write control applications.

Main Features

  • Capacity: 16 Mbit, 1M × 16 bit
  • Part Number: ZDSP1M16-PSO/EASP1M16-PSODW
  • Maximum Access Time: 10 ns
  • Operating Voltage: 2.4V ~ 3.6V
  • Operating Mode: Asynchronous
  • Operating Temperature: -55℃ ~ 125℃
  • Storage Temperature: -65℃ ~ 150℃
  • Package Type: TSOP 48
  • ESD Rating: 2000V (HBM)

 

Feature Description

  • High-performance, low-power CMOS process
  • Fully static operation: no clock or refresh operations required
  • Expansion support: #CE and #OE
  • #CE control for entering low-power mode
  • TTL-compatible I/O
  • High-byte control signal (#UB) and low-byte control signal (#LB) enable data read/write control for high and low 8-bit bytes
  • Uniformly distributed power and ground pins within the chip for enhanced noise immunity

High-Speed 16 Mbit (1M×16 bit) Asynchronous SRAM

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