8.High-Speed8Mbit-512K×16bitAsynchronousSRAMEASP512K16-10PSOEASP512K16-10PSODWEASP512K16-10PSODI_副本

Product Applications

This product is primarily used in high-reliability and high-speed data storage applications.

Main Features

  • Capacity: 8 Mbit, 512K × 16 bit
  • Part Number: EASP512K16-10PSO/EASP512K16-10PSODW/EASP512K16-10PSODI
  • Maximum Access Time: 12 ns
  • Operating Voltage: 2.4V ~ 3.6V
  • Operating Mode: Asynchronous
  • Operating Temperature: -55℃ ~ 125℃
  • Storage Temperature: -65℃ ~ 150℃
  • Package Type: TSOP 44
  • ESD Rating: 2000V (HBM)

 

Feature Description

  • High-performance, low-power CMOS process
  • Fully static operation: no clock or refresh operations required
  • Expansion support: #CE and #OE
  • TTL-compatible I/O
  • High-byte control signal (#UB) and low-byte control signal (#LB) enable data read/write control for high and low 8-bit bytes
  • Uniformly distributed power and ground pins within the chip for enhanced noise immunity

High-Speed 8Mbit (512K×16 bit) Asynchronous SRAM

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