5.Radiation-Hardened20Mbit40Mbit-512K1M×40bitLowUpsetRateSRAMEASP512K40RHEASP1M40RH_副本

Product Applications

This product is primarily used in aerospace computer control and data processing systems.

Main Features

  • Capacity: 20 Mbit/40 Mbit, 512K/1M × 40 bit
  • Part Number: ZDSP512K40 RH/ ZDSP1M40 RH
  • Maximum Access Time: 19 ns
  • Operating Voltage: Single supply 2.97V ~ 3.63V; Dual supply 2.97V ~ 3.63V (IO) / 1.1V ~ 1.26V (CORE)
  • Operating Mode: Asynchronous
  • Operating Temperature: -55℃ ~ 125℃
  • Storage Temperature: -65℃ ~ 150℃
  • Package Type: Bare Die
  • ESD Rating: 2000V (HBM)

Radiation Hardness Specifications

  • Total Ionizing Dose (TID): ≥150 krad(Si)
  • Single Event Latch-up (SEL) Threshold: ≥75 MeV·cm²/mg
  • 20 Mbit Soft Error Rate (SER) (90% W.C. GEO orbit): ≤1.45E-12 errors/bit·day
  • 40 Mbit Soft Error Rate (SER) (90% W.C. GEO orbit): ≤3.60E-10 errors/bit·day

Feature Description

  • TTL-compatible I/O
  • Bidirectional data bus with three-state enable
  • Asynchronous operation with internal EDAC (Error Detection and Correction)

Radiation-Hardened 20 Mbit/40 Mbit (512K/1M×40 bit) Low Upset Rate SRAM

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