Pinout Diagram

Die Size (X×Y): 11126μm × 12790μm

Product Applications

This product is primarily used in aerospace computer control and data processing systems.

Main Features

• Capacity: 4 Mbit, 512K × 8 bit
• Part Number: ZDS512K8-R
• Maximum Access Time: 20 ns
• Operating Voltage: 2.97V ~ 3.6V
• Operating Mode: Asynchronous
• Operating Temperature: -55℃ ~ 125℃
• Storage Temperature: -65℃ ~ 150℃
• Delivery Form: Bare Die
• ESD Rating: 2000V (HBM)

Radiation Hardness Specifications

• Total Ionizing Dose (TID): ≥100 krad(Si)
• Single Event Latch-up (SEL) Threshold: ≥75 MeV·cm²/mg
• Soft Error Rate (SER) (90% W.C. GEO orbit): ≤1E-7 errors/bit·day

Feature Description

• Asynchronous operation, compatible with industry-standard 512K×8bit SRAM
• TTL-compatible I/O
• Bidirectional data bus with three-state enable
• Standby current not exceeding 45 mA
• Operating current not exceeding 80 mA @ 50 MHz